NP100P06PDG-E1-AY【PDF 4/9 页】MOSFET P-CH -60V MP-25ZP/TO-263

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NP100P06PDG

ELECTRICAL CHARACTERISTICS (T A = 25 ° C)

CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate to Source Threshold Voltage

SYMBOL

I DSS

I GSS

V GS(th)

TEST CONDITIONS

V DS = ? 60 V, V GS = 0 V

V GS = m 20 V, V DS = 0 V

V DS = ? 10 V, I D = ? 1 mA

MIN.

? 1.0

TYP.

? 1.6

MAX.

? 10

m 100

? 2.5

UNIT

μ A

nA

V

Forward Transfer Admittance

Note

| y fs |

V DS = ? 10 V, I D = ? 50 A

43

86

S

Drain to Source On-state Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Note

R DS(on)1

R DS(on)2

C iss

C oss

C rss

t d(on)

t r

t d(off)

V GS = ? 10 V, I D = ? 50 A

V GS = ? 4.5 V, I D = ? 50 A

V DS = ? 10 V,

V GS = 0 V,

f = 1 MHz

V DD = ? 30 V, I D = ? 45 A,

V GS = ? 10 V,

R G = 0 Ω

4.4

5.0

15000

1810

840

28

35

275

6.0

7.8

m Ω

m Ω

pF

pF

pF

ns

ns

ns

Fall Time

t f

100

ns

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q G

Q GS

Q GD

V DD = ? 48 V,

V GS = ? 10 V,

I D = ? 100 A

300

35

85

nC

nC

nC

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Note

V F(S-D)

t rr

Q rr

I F = ? 100 A, V GS = 0 V

I F = ? 100 A, V GS = 0 V,

di/dt = ? 100 A/ μ s

0.92

67

135

1.5

V

ns

nC

Note Pulsed test PW ≤ 350 μ s, Duty Cycle ≤ 2%

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

TEST CIRCUIT 2 SWITCHING TIME

PG.

V GS = ? 20 → 0 V

R G = 25 Ω

50 Ω

L

V DD

PG.

R G

D.U.T.

R L

V DD

V GS

Wave Form

V GS ( ? )

10%

0

V GS

90%

V DS ( ? )

?

I D

I AS

BV DSS

V DS

V GS ( ? )

0

V DS

Wave Form

V DS

0

90%

10% 10%

90%

V DD

Starting T ch

τ

τ = 1 μ s

Duty Cycle ≤ 1%

t d(on)

t on

t r t d(off)

t off

t f

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I G = ? 2 mA

R L

2

PG.

50 Ω

V DD

Data Sheet D18693EJ3V0DS

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